LNJ237W82RA Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Hight Bright Surface Mounting Chip LED

This product complies with the RoHS Directive (EU 2002/95/EC).
LNJ237W82RA
Hight Bright Surface Mounting Chip LED
ESS II Type
 Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Power dissipation
P_D
55
mW
Forward current
I_F
20
mA
Pulse forward current ^*
I_FP
60
mA
Reverse voltage
V_R
4
V
Operating ambient temperature
T_opr
–30 to +85
°C
Storage temperature
T_stg –40 to +100 °C
Note) *: The condition of I_FP is duty 10%, Pulse width 1 msec.
 Electro-Optical Characteristics T_a = 25°C±3°C
Parameter
Symbol
Luminous intensity ^*1
I_O I_F = 5 mA
Reverse current
I_R V_R = 4 V
Forward voltage
V_F I_F = 5 mA
Peak emission wavelength
Dominant emission wavelength ^*2
λ_P I_F = 5 mA
λ_d I_F = 5 mA
Spectral half band width
Δλ I_F = 5 mA
Note) *1: Measurement tolerance: ±20%
*2: Measurement tolerance: ±2 nm
Conditions
I_O  I_F
10⁴
I_F  V_F
10²
 Lighting Color
 Red
Min Typ Max Unit
5.8 16.0 26.8 mcd

 100
µA
 1.95 2.30
V
 645 
nm
620 630 640
nm

20

nm
Relative luminous intensity  T_a
10³
10³
10
10²
10²
1
1
10
10²
Forward current I_F (mA)
Relative luminous intensity  λ_P
1
1.5
1.7
1.9
2.1
2.3
2.5
Forward voltage V_F (V)
100
Y
Directive characteristics
80
X
−20° ^{−10° 0° 10°} 20°
X
−30°
30°
60
Y −40°
80°
40°
−50°
50°
40
60°
−60°
60°
−70°
40°
70°
20
−80°
20°
80°
0
−90°
90°
550
600
650
700 100 80 60 40 20 0 20 40 60 80 100
Peak emission wavelength λ_P (nm)
Relative luminous intensity (%)
10
−30
0
30
60
90
Ambient temperature T_a (°C)
I_F  T_a
40
30
20
10
0
−30
0
30
60
90
Ambient temperature T_a (°C)
Publication date: October 2011
Ver. BEK
1