LNJ036X8ARA Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – LNJ036X8ARA Hight Bright Surface Mounting Chip LED

Light Emitting Diodes
This product complies with the RoHS Directive (EU 2002/95/EC).
LNJ036X8ARA
Hight Bright Surface Mounting Chip LED
ESS Type
 Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
 Lighting Color
 White
Power dissipation
P_D
40
mW
Forward current
/ _{Pulse forward current *}
I_F
10
mA
I_FP
40
mA
e _{Reverse voltage}
V_R
5
V
e. Operating ambient temperature
T_opr
–30 to +85
°C
nc ^{d stag Storagetemperature}
T_stg –40 to +100 °C
cle ^Note) *: ^{The condition of I}FP ^{is duty 10%, Pulse width 1 msec.}
a ^e lifecy ^{ Electro-Optical Characteristics Ta = 25°C±3°C}
ct _Parameter
Symbol
n ^u _{rodu Luminous intensity} *
I_O I_F = 5 mA
te ^{tin ur P Reversecurrent}
I_R V_R = 5 V
g ^{fo e . Forward voltage}
V_F I_F = 5 mA
in ^{n followinance typpe ed rmation Chromaticity coordinates}
x I_F = 5 mA
y I_F = 5 mA
a ^{o ludes inten ce ty d typ t info /en/ Note) *: Measurement tolerance: ±20%}
Conditions
c _ed ^inc _ed ^ma _tenan ^{tinue type lates o.jp IO  IF}
u ^{n in on d t .c 1000}
M _is tin ^{la a isc ue ou nic 500}
p ^m d tin ^{b o 300}
iscon ^{ned con RL a anas 100}
/D ^{pla dis g U n.p 50}
e ^{in o 30}
I_F  V_F
100
50
30
10
D_{anc llow emic 10}
5
ten ^{fo .s 5}
3
in isit ^{ww 3}
Ma e ^{v ://w} ₁
as ttp ¹
3 5 10
30 50 100
Ple ^{h Forward current IF (mA)}
1
1.0
2.0
3.0
4.0
5.0
6.0
Forward voltage V_F (V)
Min Typ Max Unit
25
35
56
mcd
10
µA
2.9 3.2
V
0.194
0.262 
0.140
0.235 
Relative luminous intensity  T_a
10
5
3
1
0.5
0.3
0.1
−20 0
20 40 60
80 100
Ambient temperature T_a (°C)
I_F  T_a
Y
10
X ^{Directive characteristics}
X
−20° ^{−10° 0°}
−30°
Y _−40°
80°
10° _20°
30°
40°
−50°
60°
−60°
50°
5
60°
−70°
40°
70°
−80°
20°
80°
−90°
90°
100 80 60 40 20 0 20 40 60 80 100
0
0
20
40
60
80
100
Publication date: December 2008
Relative luminous intensity (%)
SHD00691BEK
Ambient temperature T_a (°C)
1