LNJ03004BDD3 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Surface Mounting Chip LED

LNJ03004BDD3
Surface Mounting Chip LED
3230 Type
 Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Power dissipation
Forward current ^*1
Pulse forward current ^*2
P_D
430
mW
I_F
120
mA
I_FP
200
mA
Junction temperature
T_j
110
°C
Operating ambient temperature
T_opr
–30 to +85
°C
Storage temperature
T_stg –40 to +100 °C
Note) *1: I_F is different by radiated factor of evaluation board.
This value is mounted on evaluation board at Rthj-a = 35.0 °C/W.
*2: The condition of pulse current IFP is 55 ms pulse width, 10 % duty.
 Lighting Color
 White (6 500 [Kelvin])
 Electro-Optical Characteristics T_a = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Forward voltage ^*1
Luminous flux ^*2
V_F I_FP = 60 mA
F I_FP = 60 mA
2.6
3.0
3.4
V
18.0 24.3 36.0
lm
Chromaticity coordinates ^*3
Color Rendering Index
x I_FP = 60 mA
y I_FP = 60 mA
Ra I_FP = 60 mA
0.313

0.330

82

Note) *1: Complete Forward Voltage measurement within 0.1 seconds. Tolerance ±3%
*2: Complete Luminous flux measurement within 0.1 seconds. Tolerance ±10%
*3: Complete Chromaticity coordinates measurement within 0.1 seconds. Tolerance of chromaticity is ±0.01
F  I_FP
80
60
40
I_FP  V_F
200
160
120
Relative Luminous Flux  T_a
120
100
80
60
80
40
20
40
20
0
0
50
100
150
200
250
Pulse forward current I_FP (mA)
0
2.0
2.5
3.0
3.5
4.0
Forward voltage V_F (V)
0
−40 −20 0 20 40 60 80 100
Ambient temperature T_a (°C)
Relative Spectral Power  Wavelength
1.2
1.0
0.8
0.6
0.4
0.2
0
350
500
650
800
Wavelength (nm)
Y
120
X
X ^{Directive characteristics}
Y
1.0
0° _{10° 20°}
30°
80
0.8
80
40°
50°
0.6
60
60°
40
0.4
40
70°
0.2
20
80°
−90
−60
−30
90°
0 0.2 0.4 0.6 0.8 1.0
0
0
Radiation Angle (deg) Relative luminous intensity (a.u.)
I_F  T_a
20
40
60
80
100
Ambient temperature T_a (°C)
Publication date: June 2014
Ver. DEK
1