LNG992CFB_13 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Light Emitting Diodes

Light Emitting Diodes
This product complies with the RoHS Directive (EU 2002/95/EC).
LNG992CFB
Round Type
φ5.0 mm
 Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
 Lighting Color
 Blue
Power dissipation
P_D
120
mW
Forward current
/ _{Pulse forward current *}
I_F
30
mA
I_FP
100
mA
e _{Reverse voltage}
V_R
5
V
e. _{Operating ambient temperature}
T_opr
–25 to +80
°C
nc ^{d stag Storagetemperature}
T_stg –30 to +100 °C
cle Note) _*: The condition of I_FP is duty 10%, Pulse width 10 msec.
a ^e lifecy _{ Electro-Optical Characteristics Ta = 25°C}
n ^{u uct Parameter}
Symbol
Conditions
rod _{Luminous intensity}
te ^{tin ur P Reversecurrent}
ing ^fo _type ^{n. Forward voltage}
in ^{n llow ce atio Peak emission wavelength}
es ^fo tenan ^{type typed form / Spectral half band width}
I_O I_F = 20 mA
I_R V_R = 5 V
V_F I_F = 20 mA
λ_P I_F = 20 mA
Δλ I_F = 20 mA
a _{coed incluedd maintenancetinued type test} ^{in .jp/en} I_O  I_F
u ^{n in on d t la .co 10000}
M _is tin ^{la a isc ue ou nic 5000}
p ^m d tin ^{ab so 3000}
I_F  V_F
100
50
30
iscon _laned ^{iscon URL .pana} 1000
10
e/D ^{p d ing icon} 500
5
D_{anc llow em 300}
3
inten isit ^{fo ww.s} ₁₀₀
Ma e ^{v ://w 1}
3 5 10
30 50 100
Pleas ^{http Forward current IF (mA)}
1
2.0 3.0 4.0 5.0 6.0
Forward voltage V_F (V)
Min Typ Max Unit
960 1500
mcd
10
µA
3.5 4.0
V
468
nm
30
nm
Relative luminous intensity  T_a
1000
500
300
100
50
30
10
−20 0 20 40 60 80 100
Ambient temperature T_a (°C)
I_F  T_a
Relative luminous intensity  λ_P
50
120
100
Directive characteristics
40
20° ^{10° 0° 10°} 20°
80
30°
30°
40°
80°
40°
30
60
50°
50°
60°
20
60°
60°
40
70°
40°
70°
10
20
80°
20°
80°
0
350
400
450
500
550 ⁹⁰1^°00 80 60 40 20
0
90°
20 40 60 80 100
100
20
40
60
80 100
Peak emission wavelength λ_P (nm)
Relative luminous intensity (%)
Ambient temperature T_a (°C)
Publication date: December 2008
SHD00385BEK
1