LNCQ03PS Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Red Light Semiconductor Laser

Semiconductor Laser
LNCQ03PS
Red Light Semiconductor Laser
For optical control systems
Features
High output operations with oscillatins wavelength of 660nm : 35mw
Low threshold current
Stable single horizontal mode osillation
Space saved by miniaturization
Low astigmatic difference facilitates good concentrated light spot,
production.
Applications
DVD-Ram
Pointer
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Symbol Ratings Unit
Radiant power
P_O
35
mW
Reverse voltage
Laser
V_R
1.5
V
PIN V_R (PIN)
30
V
Power dissipation
P_d (PIN)
60
mW
Operating ambient temperature T_opr –10 to +60 ˚C
Storage temperature
T_stg – 40 to +85 ˚C
1.0±0.1
ø5.6
+0
–0.025
ø4.4
ø3.55±0.1
Unit : mm
2
Reference slot
ø1.0 min.
PD
LD
31
Junction plane
Reference plane
Reference plane
3-ø0.45
1
3
ø2.0
2
Bottom view
1: LD Anode
2: Common Case
3: PD Cathode
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min typ
Threshold current
I_th
CW
20
50
Operating current
I_OP
CW P_O = 30mW
50
95
Operating voltage
V_OP
CW P_O = 30mW
2.0 2.5
Resistance between electrodes
R_S
CW P_O = 30mW
Oscillation wavelength
λ_L
CW P_O = 30mW
3.0 5.0
635 660
Slope efficiency
SE
Horizontal direction
Radiation angle
θ_//
Vertical direction
θ_⊥
Optical axis
X direction θ_X
accuracy _{Y direction θY}
Astigmatic difference
As^*2
CW P_O = 30mW
CW P_O = 30mW
CW P_O = 30mW
CW P_O = 30mW
CW P_O = 4mW
CW P_O = 4mW
0.5 0.7
7.5 8.5
17
22
–2.0
–3.0
5.0
*1 _{θ// and θ⊥ are the angles where the optical intencity is a half of its max. value.( half full angle )}
*2 _{Reference to package axis.}
*3 _{Guaranteed value in design.}
max Unit
70
mA
120 mA
3.0
V
10
Ω
675 nm
1.1 W/A
10.5 deg.
26.5 deg.
+2.0 deg.
+3.0 deg.
10
µm
1