LNC801PS Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – High Power Output Semiconductor Laser

Semiconductor Laser
LNC801PS
High Power Output Semiconductor Laser
Overview
The LNC801PS is a GaAlAs laser diode which provides stable,
continuous, single mode oscillation of near infrared light at room
temperature. This product can be used in a wide range of light source
applications, including laser printers, facsimiles, optical disk memory,
and optical information devices.
Features
Low threshold oscillation
Stable single horizontal mode oscillation
Built-in PIN photodiode for light output monitors
Light output is continuously variable as far as 60 mW
Supports direct modulation
Near infrared oscillating wavelength
Long lifetime, high reliability
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Symbol Ratings Unit
Radiant power
P_O
60
mW
Reverse voltage
Laser
V_R
1.5
V
PIN V_R (PIN)
30
V
Power dissipation
P_d (PIN)
100
mW
Operating ambient temperature T_opr –10 to +60 ˚C
Storage temperature
T_stg – 40 to +80 ˚C
ø1.0 min.
ø5.6
+0
–0.025
ø4.3±0.1
ø3.55±0.1
Unit : mm
2
1.0±0.1
LD
PD
13
Junction plane
Reference plane
Reference slot
Kovar glass
LD pellet
Reference plane
ø1.2max.
3-ø0.45
2
1
3
ø2.0
Bottom view
1: LD Anode
2: Common Case
3: PD Cathode
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min typ
Threshold current
I_th
CW
10
30
Operating current
I_OP
P_O = 50mW
50
70
Operating voltage
V_OP
P_O = 50mW
2.0
Oscillation wavelength
λ_L
P_O = 50mW
815 830
Horizontal direction
Radiation angle
θ_//*
Vertical direction
θ_⊥^*
P_O = 50mW
P_O = 50mW
7
10
18
25
Differential efficiency
η
CW P_O = 36mW/I(40mW – 4mW) 0.6
1.0
Reverse current (DC)
I_R
V_R (PIN) = 5V
PIN photo current
I_P
P_O = 50mW, V_R (PIN) = 5V
Optical axis
X direction θ_X
P_O = 50mW
–2.0
accuracy _{Y direction θY}
P_O = 50mW
–3.0
Oscillation mode
Single horizontal mode
* _{θ// and θ⊥ are the angles where the optical intencity is a half of its max. value.( half full angle )}
max Unit
50
mA
120 mA
3.0
V
845 nm
13
deg.
28
deg.
1.5 mW/mA
0.1
µA
mA
+2.0 deg.
+3.0 deg.
1