LNC707PS Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – High Power Output Semiconductor Laser

Semiconductor Laser
LNC707PS
High Power Output Semiconductor Laser
Overview
The LNC707PS is a near infrared GaAlAs laser diode which
provides continuous oscillation in single mode and is stable at low
operating current. LNC707PS uses a small package, and is capable
of operating continuously at high temperatures with high output (60
mW). It can be used in a wide range of applications as a light source
for optical disk memory and optical information devices. In
particular, it can be used in making equipment portable due to its
low current operations.
Features
Low current operations : 70 mA (with 60 mW output)
High power output : 60 mW
Stable single horizontal mode oscillation
Small size package
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Symbol Ratings Unit
Radiant power
P_O
60
mW
Reverse voltage
Laser
V_R
2
V
PIN V_R (PIN)
30
V
Power dissipation
P_d (PIN)
100
mW
Operating ambient temperature T_opr –10 to +60 ˚C
Storage temperature
T_stg – 40 to +80 ˚C
ø1.0 min.
ø5.6
+0
–0.025
ø4.3±0.1
ø3.55±0.1
Unit : mm
2
1.0±0.1
LD
PD
13
Junction plane
Reference plane
Reference slot
Kovar glass
LD pellet
Reference plane
ø1.2max.
3-ø0.45
2
1
3
ø2.0
Bottom view
1: LD Anode
2: Common Case
3: PD Cathode
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min typ
Threshold current
I_th
CW
15
25
Operating current
I_OP
P_O = 60mW
70 100
Operating voltage
V_OP
P_O = 60mW
2.0
Oscillation wavelength
λ_L
P_O = 60mW
778 784
Horizontal direction
Radiation angle
θ_//*
Vertical direction
θ_⊥^*
P_O = 60mW
P_O = 60mW
7
10
17
21
Differential efficiency
η
P_O = 55mW/I(60mW – 5mW)
0.7
0.9
Reverse current (DC)
I_R
V_R (PIN) = 5V
PIN photo current
I_P
P_O = 60mW, V_R (PIN) = 5V
0.2
Optical axis
X direction θ_X
P_O = 60mW
–2.0
accuracy _{Y direction θY}
P_O = 50mW
–3.0
Oscillation mode
Single horizontal mode
* _{θ// and θ⊥ are the angles where the optical intencity is a half of its max. value.( half full angle )}
max Unit
35
mA
130 mA
2.5
V
790 nm
13
deg.
25
deg.
1.2 mW/mA
0.1
µA
mA
+2.0 deg.
+3.0 deg.
1