LNC705PS Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – GaAlAs Semiconductor Laser

Semiconductor Laser
LNC705PS
GaAlAs Semiconductor Laser
Features
Low threshold current
Stable single horizontal mode oscillation
Long lifetime, high reliability
High optical power output : 50mW
Applications
Optical data processing devices
Optical disk memory
Optical measuring equipment
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Symbol Ratings Unit
Radiant power
P_O
50
mW
Reverse voltage
Laser
V_R
2
V
PIN V_R (PIN)
30
V
Power dissipation
P_d (PIN)
100
mW
Operating ambient temperature T_opr –10 to +60 ˚C
Storage temperature
T_stg – 40 to +80 ˚C
ø1.0 min.
ø5.6
+0
–0.025
ø4.3±0.1
ø3.55±0.1
Unit : mm
2
1.0±0.1
LD
1
Junction plane
PD
3
Reference plane
Reference slot
Reference plane
3-ø0.45
2
1
3
ø2.0
Bottom view
1: LD Anode
2: Common Case
3: PD Cathode
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Threshold current
I_th
CW
10
20
35
mA
Operating current
I_OP
CW P_O = 40mW
40
80 100 mA
Operating voltage
V_OP
CW P_O = 40mW
2.0 2.5
V
Oscillation wavelength
λ_L
CW P_O = 40mW
770 785 805 nm
Horizontal direction
Radiation angle
θ_//^*1
Vertical direction θ_⊥^*1
CW P_O = 40mW
CW P_O = 40mW
7
9
13
deg.
20
25
30
deg.
Differential efficiency
η
CW P_O = 36mW/I(40mW – 4mW) 0.7
0.9
1.2
W/A
PIN photo current
I_P
CW P_O = 40mW, V_R (PIN) = 5V
0.5
mA
Reverse current (DC)
I_R
V_R (PIN) = 15V
0.1
µA
Optical axis
X direction θ_X
CW P_O = 40mW
–2.0
+2.0 deg.
accuracy _{Y direction θY}
CW P_O = 40mW
–3.0
+3.0 deg.
*1 _{The radiation angle is indicated as half full angles.}
1