LNC704PS Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – GaAlAs Semiconductor Laser

Semiconductor Laser
LNC704PS
GaAlAs Semiconductor Laser
Features
Low threshold current
Stable single horizontal mode oscillation
Long lifetime, high reliability
Applications
Optical data processing devices
Optical disk memory
Optical measuring equipment
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Symbol Ratings Unit
Radiant power
P_O
40
mW
Reverse voltage
Laser
V_R
2
V
PIN V_R (PIN)
30
V
Power dissipation
P_d (PIN)
100
mW
Operating ambient temperature T_opr –10 to +60 ˚C
Storage temperature
T_stg – 40 to +80 ˚C
ø1.0 min.
ø5.6
+0
–0.025
ø4.3±0.1
ø3.55±0.1
Unit : mm
2
1.0±0.1
LD
PD
13
Junction plane
Reference plane
Reference slot
Reference plane
3-ø0.45
2
1
3
ø2.0
Bottom view
1: LD Anode
2: Common Case
3: PD Cathode
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Threshold current
I_th
CW
10
20
35
mA
Operating current
I_OP
CW P_O = 32mW
30
70
90
mA
Operating voltage
V_OP
CW P_O = 32mW
2.0 2.5
V
Oscillation wavelength
λ_L
CW P_O = 32mW
770 785 805 nm
Horizontal direction
Radiation angle
θ_//^*1
Vertical direction θ_⊥^*1
CW P_O = 32mW
CW P_O = 32mW
7
9
13
deg.
20
25
30
deg.
Differential efficiency
η
CW P_O = 29mW/I(32mW – 3mW) 0.7
0.9
1.2
W/A
PIN photo current
I_P
CW P_O = 32mW, V_R (PIN) = 5V
0.4
mA
Reverse current (DC)
I_R
V_R (PIN) = 15V
0.1
µA
Optical axis
X direction θ_X
CW P_O = 32mW
–2.0
+2.0 deg.
accuracy _{Y direction θY}
CW P_O = 32mW
–3.0
+3.0 deg.
*1 _{The radiation angle is indicated as half full angle.}
1