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LNC703PS Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Semiconductor Laser for LBPLaser Beam Printers
Semiconductor Laser
LNC703PS
Semiconductor Laser for LBP(Laser Beam Printers)
Overview
The LNC703PS is a near infrared GaAlAs laser diode which
provides continuous oscillation in single mode and is stable at low
operating current. This product is characterized by a low operating
current and low drooping, making it suitable for a wide range of
optical information equipment.
Features
Low current operations : 40 mA (with 12 mW output)
High output (15 mW) for increased printing speed
ø1.0 min.
ø5.6
+0
–0.025
ø4.3±0.1
ø3.55±0.1
Unit : mm
2
1.0±0.1
LD
PD
13
Junction plane
Reference plane
Reference slot
Kovar glass
LD pellet
Reference plane
ø1.2max.
3-ø0.45
Stable single horizontal mode oscillation
2
Low astigmatic difference
Low drooping
1
3
ø2.0
Bottom view
1: LD Anode
2: Common Case
3: PD Cathode
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Symbol Ratings Unit
Radiant power
PO
15
mW
Reverse voltage
Laser
VR
2
V
PIN VR (PIN)
30
V
Power dissipation
Pd (PIN)
100
mW
Operating ambient temperature Topr –10 to +60 ˚C
Storage temperature
Tstg – 40 to +80 ˚C
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min typ
Threshold current
Ith
CW
10
20
Operating current
IOP
PO = 12mW
30
40
Operating voltage
VOP
PO = 12mW
2.0
Oscillation wavelength
λL
PO = 12mW
775 785
Horizontal direction
Radiation angle
θ//*
Vertical direction
θ⊥*
PO = 12mW
PO = 12mW
7
10
18
25
Differential efficiency
η
PO = 9mW/I(12mW) – I(3mW) 0.4
0.7
Reverse current (DC)
IR
VR (PIN) = 5V
PIN photo current
IP
PO = 12mW, VR (PIN) = 5V
0.3
Optical axis
X direction θX
PO = 12mW
–2.0
accuracy Y direction θY
PO = 12mW
–3.0
Droop
Dr
PO = 12mW, f = 600Hz, duty10% to 90%
4
Oscillation mode
Single horizontal mode
* θ// and θ⊥are the angles where the optical intencity is a half of its max. value. ( half full angle )
max Unit
35
mA
70
mA
2.5
V
795 nm
12
deg.
32
deg.
1.0 mW/mA
0.1
µA
mA
+2.0 deg.
+3.0 deg.
10
%
1