LNC702PS Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – GaAlAs Semiconductor Laser

Semiconductor Laser
LNC702PS
GaAlAs Semiconductor Laser
Features
Low threshold current
Stable single horizontal mode oscillation
Low drooping
Applications
Optical data processing devices
Laser beam printers
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Symbol Ratings Unit
Radiant power
P_O
5
mW
Reverse voltage
Laser
V_R
2
V
PIN V_R (PIN)
30
V
Power dissipation
P_d (PIN)
60
mW
Operating ambient temperature T_opr –10 to +60 ˚C
Storage temperature
T_stg – 40 to +85 ˚C
ø1.0 min.
ø5.6
+0
–0.025
ø4.3±0.1
ø3.55±0.1
Unit : mm
2
1.0±0.1
LD
1
Junction plane
PD
3
Reference plane
Reference slot
Reference plane
3-ø0.45
2
1
3
ø2.0
Bottom view
1: LD Anode
2: Common Case
3: PD Cathode
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min typ
Threshold current
I_th
CW
15
25
Operating current
I_OP
CW P_O = 5mW
20
35
Operating voltage
V_OP
CW P_O = 5mW
1.9
Oscillation wavelength
λ_L*2
CW P_O = 5mW
780 795
Horizontal direction
Radiation angle
θ_//^*1
Vertical direction θ_⊥^*1
CW P_O = 5mW
CW P_O = 5mW
8
12
20
33
PIN photo current
I_P
CW P_O = 5mW, V_R (PIN) = 5V 0.3
0.8
Reverse current (DC)
I_R
V_R (PIN) = 15V
Optical axis
X direction θ_X
CW P_O = 5mW
–2.0
accuracy
Y direction θ_Y
CW P_O = 5mW
–3.0
*1 _{The radiation angle is indicated as half full angle.}
*2 _{Sampling inspections are to be performed.}
On each wafer, n = 10 samplings are to be performed, with an evaluation criterion of zero rejects.
max
40
50
2.5
810
15
45
1.6
0.1
+2.0
+3.0
Unit
mA
mA
V
nm
deg.
deg.
mA
µA
deg.
deg.
1