LNC701PS Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – GaAlAs Semiconductor Laser

Semiconductor Laser
LNC701PS
GaAlAs Semiconductor Laser
Features
Low threshold current
Stable single horizontal mode oscillation
Long lifetime, high reliability
Applications
Optical data processing devices
Optical disk memory drive
Optical measuring equipment
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Symbol Ratings Unit
Radiant power
P_O
35
mW
Reverse voltage
Laser
V_R
2
V
PIN V_R (PIN)
30
V
Power dissipation
P_d (PIN)
100
mW
Operating ambient temperature T_opr –10 to +60 ˚C
Storage temperature
T_stg – 40 to +80 ˚C
ø1.0 min.
ø5.6
+0
–0.025
ø4.3±0.1
ø3.55±0.1
Y
Unit : mm
2
LD
X
1
Junction plane
PD
3
1.0±0.1
Z
Reference slot
Kovar glass
LD pellet
Reference plane
ø1.2 max.
3-ø0.45
2
1
3
ø2.0
Bottom view
1: LD anode
2: Common case
3: PD cathode
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Threshold current
I_th
CW
10
20
30
mA
Operating current
I_OP
Operating voltage
V_OP
Oscillation wavelength
λ_L
Horizontal direction^*1
Radiation angle
θ_//
Vertical direction^*1
θ_⊥
Differential efficiency
η
CW P_O = 30mW
CW P_O = 30mW
CW P_O = 30mW
CW P_O = 30mW
CW P_O = 30mW
CW P_O = 3 - 30mW
30
55
70
mA
2.0 2.5
V
780 785 790 nm
8.5
10 11.5 deg.
23
25
28
deg.
0.8 1.0 1.2
PIN photo current
I_P
CW P_O = 30mW, V_R (PIN) = 5V
0.3
mA
Reverse current (DC)
I_R
V_R (PIN) = 15V
0.1
µA
Optical axis
X direction θ_X
CW P_O = 30mW
–2.0
+2.0 deg.
accuracy _{Y direction θY}
CW P_O = 30mW
–3.0
+3.0 deg.
*1 _{The radiation angle is indicated as the full angle at half maximum.}
1