LNA4905L_08 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – GaAlAs Infrared Light Emitting Diode

This product complies with the RoHS Directive (EU 2002/95/EC).
Infrared Light Emitting Diodes
LNA4905L
GaAlAs Infrared Light Emitting Diode
For optical control systems
 Features
 High-power output, high-efficiency: P_O = 15 mW (min.)
 Fast response and high-speed modulation capability: f_C = 30 MHz (typ.)
 Transparent epoxy resin package
 Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Power dissipation
P_D
190
mW
Forward current
Pulse forward current ^*
I_F
100
mA
I_FP
1
A
Reverse voltage
V_R
3
V
Operating ambient temperature
T_opr
–25 to +85
°C
Storage temperature
Note) *: f = 100 Hz, Duty cycle = 0.1%
T_stg –30 to +100 °C
 Electrical-Optical Characteristics T_a = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Radiant power
P_O I_F = 50 mA
15
mW
Reverse current
I_R V_R = 3 V
10
µA
Forward voltage
V_F I_F = 100 mA
1.7
2.1
V
Peak emission wavelength
λ_P I_F = 50 mA
880
nm
Spectral half band width
Δλ I_F = 50 mA
50
nm
Half-power angle
θ The angle when the radiant power is halved.
15
°
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Cutoff frequency: 30 MHz
P_O at f = f_C
f_C : 10 × log
= −3
P_O at f = 1 MHz
3. A light detection element uses a silicon diode have proofread a load with a standard device.
4. LED might radiate red light under large current drive.
Publication date: October 2008
SHC00037CED
1