LNA4905L Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – GaAs Infrared Light Emitting Diode

Infrared Light Emitting Diodes
LNA4905L
GaAs Infrared Light Emitting Diode
For optical control equipment
s Features
• High output power, high-efficiency : (15 mW min.)
• Quick response, high speed modulation (f_C=30 MHz typ.)
• Transparent epoxy resin package
s Absolute Maximum Ratings T_a=25°C
Parameter
Symbol Ratings
Unit
Power dissipation
P_D
190
mW
Forward current(DC)
I_F
100
mA
Pulse forward current ^*
I_FP
1
A
Reverse voltage(DC)
V_R
3
V
Operating ambient temperature T_opr
−25 to +85
°C
Storage temperature
T_stg
−30 to +100
°C
Note) * : f=100 Hz, Duty cycle=0.1%
φ5±0.2
Unit : mm
2-1±0.15
2-0.6±0.15
0.6±0.15
2
1
2.54*
Note 1. * : Indicates root dimensions of lead.
2. A dimension is as a reference figure
as coming with no a public difference.
1 : Anode
2 : Cathode
s Electro-optical T_a=25°C±3°C
Parameter
Total power output
Peak emission wavelength
Spectral half band width
Forward voltage (DC)
Reverse current (DC)
Half-power angle
Symbol
P_O
λ_P
∆λ
V_F
I_R
θ
Conditions
I_F=50 mA
I_F=50 mA
I_F=50 mA
I_F=100 mA
V_F=3 V
The angle when the beam intensity is halved
Note) 1. Cut-off frequency : 30 MHz
2. LED might radiate red light under large current drive.
min typ max Unit
15
mW
880
nm
50
nm
1.7 2.1
V
10
µA
15
deg
1