LNA4801L Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – GaAlAs Infrared Light Emitting Diode

Infrared Light Emitting Diodes
LNA4801L
GaAlAs Infrared Light Emitting Diode
For optical control systems
Features
Fast response and high-speed modulation capability :
f_C = 20 MHz (typ.)
Wide directivity : θ = 22 deg. (typ.)
Transparent epoxy resin package
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Symbol Ratings Unit
Power dissipation
P_D
190
mW
Forward current (DC)
Pulse forward current
Reverse voltage (DC)
I_F
100
mA
I_FP*
1
A
V_R
3
V
Operating ambient temperature T_opr –25 to +85 ˚C
Storage temperature
* _{f = 100Hz, Duty cycle = 0.1 %}
T_stg –30 to +100 ˚C
ø3.8±0.2
ø3.0±0.2
Unit : mm
2-0.8 max.
2-0.5±0.1
0.5±0.1
2.54
12
1: Anode
2: Cathode
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min typ
Center radiant intensity
Peak emission wavelength
Spectral half band width
Forward voltage (DC)
Reverse current (DC)
Half-power angle
I_e
I_F = 50mA
λ_P
I_F = 50mA
∆λ
I_F = 50mA
V_F
I_F = 100mA
I_R
V_R = 3V
θ
The angle in which radiant intencity is 50%
12
860
40
1.6
22
Cutoff frequency
f_C*
I_FP = 50mA + 10mA_p-p
20
( ) * Frequency when modulation optical power decreases by 3dB from 1MHz 10 log PO(fCMHz) = – 3
P_O(1MHz)
max
1.9
10
Unit
mW/sr
nm
nm
V
µA
deg.
MHz
1