LNA4602L Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – GaAlAs Infrared Light Emitting Diode

Infrared Light Emitting Diodes
LNA4602L
GaAlAs Infrared Light Emitting Diode
For optical control systems
s Features
• High-power output, high-efficiency
• Light-emitting pattern of almost point source
• Ultra-miniature, thin side-view type package
s Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Ratings
Unit
Pulse forward current ^*
I_FP
1.2
A
Reverse voltage (DC)
V_R
3
V
Operating ambient temperature T_opr
−20 to +60
°C
Storage temperature
T_stg
−30 to +70
°C
Note) *: f = 100 Hz, Duty Cycle = 0.1%
Unit: mm
4.5±0.3
R1.75±0.1
2.54±0.25
4.2±0.3
2.3 1.9
2− 0.98±0.2
1.2
1.66±0.25
2− 0.45±0.15
1
2
2.54
0.45±0.15
1: Cathode
2: Anode
s Electro-optical Characteristics T_a = 25°C
Parameter
Symbol
Conditions
min typ max Unit
Radiant power
Peak emission wavelength
Spectral half band width
Forward voltage (DC)
Peak forward voltage
Reverse current (DC)
Half-power angle
P_O
I_F = 50 mA
3
mW
λ_P
I_F = 50 mA
850
nm
∆λ
I_F = 50 mA
35
nm
V_F
I_F = 50 mA
1.5 1.9
V
V_FP
I_FP = 1 A, t_W = 0.14 ms
2.9 3.8
V
I_R
V_R = 3 V
100 µA
θ
The angle in which radiant intencity is 50%
30
°
Note) 1. ∆P_O≤35% at t = 10 000 shot
f = 500 Hz, Duty = 7%
32 ms
1 s (1 shot)
2. Frequency that the modulated total output power decreases by 3 dB from that of at 1 MHz.
Cut-off Frequcency: 200 MHz
f_C:
10
log
P_O
P_O
(f_C
(1
MHz)
MHz)
=
−3
1