LNA4501F Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – GaAlAs Red Light Emitting Diode

Visible Light Emitting Diodes (Red)
LNA4501F
GaAlAs Red Light Emitting Diode
For optical fiber communications and control systems
Features
Red light emission close to monochromatic light : λ_P = 680 nm
High-power output, high-efficiency : P_O = 3 mW
High coupling characteristics and suits to a plastic fiber
High-speed response : –3dB modulation of 10 MHz
Flat resin package : ø 4.8 mm
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Symbol Ratings Unit
Power dissipation
P_D
120
mW
Forward current (DC)
Pulse forward current
Reverse voltage (DC)
I_F
40
mA
I_FP*
200
mA
V_R
3
V
Operating ambient temperature T_opr –25 to +85 ˚C
Storage temperature
* _{tw = 10 µs, Duty cycle = 10 %}
T_stg –30 to +100 ˚C
ø4.8±0.2
ø4.4±0.2
C0.2
Unit : mm
2-1.0±0.1
2- 0.6±0.15
2.54
21
1: Cathode
2: Anode
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Radiant power
Peak emission wavelength
Spectral half band width
Forward voltage (DC)
Reverse current (DC)
Response time
Half-power angle
Symbol
P_O
λ_P
∆λ
V_F
I_R
t_r, t_f
θ
Conditions
I_F = 20mA
I_F = 20mA
I_F = 20mA
I_F = 20mA
V_R = 3V
I_FP = 100mA
The angle in which radiant intencity is 50%
min typ max
1
3
680
20
1.8 2.6
100
30
30
Note : Before using this product, be sure provide and/or receive approvals regarding individual specifications.
Unit
mW
nm
nm
V
µA
ns
deg.
1