LNA4401L Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – GaAlAs Infrared Light Emitting Diode

Infrared Light Emitting Diodes
LNA4401L
GaAlAs Infrared Light Emitting Diode
For optical control systems
Features
High-power output, high-efficiency : P_O = 10 mW (typ.)
Fast response and high-speed modulation capability :
f_C = 20 MHz (typ.)
TO-18 standard type package
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Symbol Ratings Unit
Power dissipation
Forward current (DC)
Pulse forward current
Reverse voltage (DC)
Operating ambient temperature
Storage temperature
* _{f = 100 Hz, Duty cycle = 0.1 %}
P_D
190
mW
I_F
100
mA
I_FP*
1
A
V_R
3
V
T_opr –25 to +85 ˚C
T_stg –30 to +100 ˚C
ø4.6±0.15
Unit : mm
Glass lens
2-ø0.45±0.05
2.54±0.25
1.0^±0.15
1.0_±0.2
21
ø5.75 max.
1: Anode
2: Cathode
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min typ
Radiant power
Peak emission wavelength
Spectral half band width
P_O
I_F = 50mA
λ_P
I_F = 50mA
∆λ
I_F = 50mA
6
10
860
40
Forward voltage (DC)
V_F
I_F = 100mA
1.6
Reverse current (DC)
I_R
V_R = 3V
Capacitance between pins
C_t
V_R = 0V, f = 1MHz
Half-power angle
θ
The angle in which radiant intencity is 50%
6
Cutoff frequency
f_C*
I_FP = 50mA + 10mA_p-p
20
( ) * Frequency when modulation optical power decreases by 3dB from 1MHz. 10 log PO(fCMHz) = – 3
P_O(1MHz)
max
1.9
10
Unit
mW
nm
nm
V
µA
pF
deg.
MHz
1