LNA2902L Datasheet, PDF (1/4 Pages) Panasonic Semiconductor – GaAs infrared light emitting diode For optical control systems

Infrared Light Emitting Diodes
LNA2902L (LN66A(L))
GaAs infrared light emitting diode
For optical control systems
I Features
• High-power output, high-efficiency: I_e = 9 mW/sr (min.)
• Emitted light spectrum is suited for silicon photodetectors
• Good radiant power output linearity with respect to input current
• Wide directivity: θ = 20° (typ.)
• Transparent epoxy resin package
• Long lead-wire type
I Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Power dissipation
P_D
160
mW
Forward current (DC)
I_F
100
mA
Pulse forward current ^*
I_FP
1.5
A
Reverse voltage (DC)
V_R
3
V
Operating ambient temperature T_opr
−25 to +85
°C
Storage temperature
T_stg
−40 to +100
°C
Note) *: Less than f = 100 Hz, duty cycle = 0.1%
φ5.0±0.2
Unit: mm
φ6.0±0.2
2-0.8 max. 0.5±0.15
2-0.5±0.15
2.54
12
1: Anode
2: Cathode
I Electro-Optical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Radiant intensity
I_e
Total power output
P_O
Peak emission wavelength
λ_P
Spectral band width
∆λ
Forward voltage
V_F
Pulse forward voltage ^*1
V_FP
Reverse current
I_R
Total capacitance between terminals
C_t
Beal angle at 50% axial intensity
θ
Cut-off frequency ^*2
f_C
I_F = 50 mA
9.0
mW/sr
I_F = 50 mA
12.0
mW
I_F = 50 mA
950
nm
I_F = 50 mA
50
nm
I_F = 100 mA
1.4 1.6
V
I_FP = 1.0 A
3.0
V
V_R = 3 V
10
µA
V_R = 0 V, f = 1 MHz
35
pF
The angle when the beam intensity is
20
°
halved.
1
MHz
Note) _*1: Less than f = 100 Hz, duty cycle = 0.1%
*2:
Cut-off
frequency
f_C:
10
×
log
P_O
P_O at
at f = f_C
f = 50 kHz
= −3
Publication date: October 2001
Note) The part number in the parenthesis shows conventional part number.
SHC00039AED
1