LNA2802L Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – GaAs Infrared Light Emitting Diode

Infrared Light Emitting Diodes
LNA2802L (LN68)
GaAs Infrared Light Emitting Diode
For optical control systems
Features
High-power output, high-efficiency : P_O = 5 mW (typ.)
Emitted light spectrum suited for silicon photodetectors :
λ_P = 940 nm (typ.)
Good radiant power output linearity with respect to input current
Long lifetime, high reliability
ø3 plastic package
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Symbol Ratings Unit
Power dissipation
P_D
75
mW
Forward current (DC)
Pulse forward current
Reverse voltage (DC)
I_F
50
mA
I_FP*
1
A
V_R
3
V
Operating ambient temperature T_opr –25 to +85 ˚C
Storage temperature
* _{f = 100 Hz, Duty cycle = 0.1 %}
T_stg – 40 to +100 ˚C
ø3.8±0.2
ø3.0±0.2
Unit : mm
2-0.8 max.
2-0.5±0.1
0.5±0.1
2.54
12
1: Anode
2: Cathode
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Radiant power
Peak emission wavelength
Spectral half band width
Forward voltage (DC)
Reverse current (DC)
Capacitance between terminals
Half-power angle
Symbol
P_O
λ_P
∆λ
V_F
I_R
C_t
θ
Conditions
I_F = 50mA
I_F = 50mA
I_F = 50mA
I_F = 50mA
V_R = 3V
V_R = 0V, f = 1MHz
The angle in which radiant intencity is 50%
min typ max Unit
2.5
5
mW
940
nm
50
nm
1.3 1.5
V
10
µA
35
pF
20
deg.
Note) The part number in the parenthesis shows conventional part number.
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