LNA2701L Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – GaAs Bi-directional Infrared Light Emitting Diode

Infrared Light Emitting Diodes
LNA2701L
GaAs Bi-directional Infrared Light Emitting Diode
For light source of VCR (VHS System)
8˚
8˚
Unit : mm
Features
Two-way directivity
High-power output, high-efficiency : P_O = 1.8 mW (min.)
Small resin package
Long lifetime, high reliability
Thin type package modified from LN59
Applications
Light source for tape end sensor of VCR and video camera
recorder of VHS system
Light source for 2-bit photo sensor
2.8±0.2
2-C0.5
2.8±0.2
1.3±0.2
ø1.4±0.2
2-R0.7
0.15
2-0.7 max.
2-0.5±0.1
2
1
2.0
0.5±0.1
1: Anode
2: Cathode
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Symbol Ratings Unit
Power dissipation
P_D
75
mW
Forward current (DC)
Pulse forward current
I_F
50
mA
I_FP*
1
A
Reverse voltage (DC)
V_R
3
V
Operating ambient temperature T_opr –25 to +65 ˚C
Storage temperature
* _{f = 100 Hz, Duty cycle = 0.1 %}
T_stg – 30 to +85 ˚C
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
Radiant intensity at center
I_e*
I_F = 50mA
Peak emission wavelength
λ_P
I_F = 20mA
Spectral half band width
∆λ
I_F = 20mA
Forward voltage (DC)
V_F
I_F = 50mA
Reverse current (DC)
I_R
V_R = 3V
Capacitance between pins
C_t
V_R = 0V, f = 1MHz
* _{Radiant intensity Ie shows each value of intensity I1 and I2 in two directions.}
I₁
I₂
min typ max Unit
1.2
mW/sr
940
nm
50
nm
1.3 1.5
V
10
µA
35
pF
1