 English |
|
|
|
|
|
|
|
| LNA2606L Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – GaAlAs on GaAs Infrared Light Emitting Diode | |||
| |||
|
Infrared Light Emitting Diodes
LNA2606L
GaAlAs on GaAs Infrared Light Emitting Diode
For optical control systems
s Features
⢠High-power output, high-efficiency: PO = 9 mW min.
⢠Emitted light spectrum suited for silicon photodetectors
⢠Ultra-miniature, thin side-view type package
⢠Long lifetime, high reliability
s Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Ratings
Unit
Power dissipation
PD
80
mW
Forward current (DC)
IF
50
mA
Pulse forward current *
IFP
1
A
Reverse voltage (DC)
VR
3
V
Operating ambient temperature Topr
â25 to +85
°C
Storage temperature
Tstg
â40 to +100
°C
Note) *: f = 100 Hz, Duty Cycle = 0.1%
Unit: mm
3.0±0.3
Ï1.1
R0.5
1.95±0.25
1.4±0.2
0.9
0.5
2â 0.5±0.15
0.3±0.15
2
1
2.54
1: Anode
2: Cathode
s Electro-Optical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
min typ max Unit
Radiant power
Peak emission wavelength
Spectral half band width
Forward voltage (DC)
Reverse current (DC)
Capacitance between pins
Half-power angle
PO
IF = 50 mA
9
19 mW
λP
IF = 50 mA
940
nm
âλ
IF = 50 mA
50
nm
VF
IF = 50 mA
1.3 1.6
V
IR
VR = 3 V
10
µA
Ct
VR = 0 V, f = 1 MHz
35
pF
θ
The angle in which radiant intencity is 50%
20
°
1
|
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese