LNA2603F Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – GaAs Infrared Light Emitting Diode

Infrared Light Emitting Diodes
LNA2603F (LN155)
GaAs Infrared Light Emitting Diode
For optical control systems
Features
High-power output, high-efficiency : P_O = 6 mW (typ.)
Emitted light spectrum suited for silicon photodetectors :
λ_P = 940 nm (typ.)
Long lifetime, high reliability
Thin side-view type package
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Symbol Ratings Unit
Power dissipation
Forward current (DC)
Pulse forward current
Reverse voltage (DC)
Operating ambient temperature
Storage temperature
* _{f = 100 Hz, Duty cycle = 0.1 %}
P_D
160
mW
I_F
100
mA
I_FP*
1.5
A
V_R
3
V
T_opr –25 to +85 ˚C
T_stg – 40 to +100 ˚C
4.5±0.15
3.5±0.15
Unit : mm
2.1±0.15
1.6±0.15
0.8±0.1
2-1.2±0.3 0.45±0.15
2-0.45±0.15
1 _2.54 2
1: Anode
2: Cathode
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Radiant power
Peak emission wavelength
Spectral half band width
Forward voltage (DC)
Reverse current (DC)
Capacitance between pins
Rise time
Fall time
Half-power angle
Symbol
P_O
λ_P
∆λ
V_F
I_R
C_t
t_r
t_f
θ
Conditions
I_F = 50mA
I_F = 50mA
I_F = 50mA
I_F = 100mA
V_R = 3V
V_R = 0V, f = 1MHz
I_FP = 100mA
The angle in which radiant intencity is 50%
min typ max Unit
3
6
mW
940
nm
50
nm
1.3 1.6
V
10
µA
45
pF
1
µs
1
µs
80
deg.
Note) The part number in the parenthesis shows conventional part number.
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