LN78 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – GaAlAs Infrared Light Emitting Diode

Infrared Light Emitting Diodes
LN78
GaAlAs Infrared Light Emitting Diode
For optical control cystems
Features
High-power output, high-efficiency : P_O = 10 mW (typ.)
High-speed modulation capability : f_C = 12 MHz
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Symbol Ratings Unit
Power dissipation
Forward current (DC)
Pulse forward current
Reverse voltage (DC)
Operating ambient temperature
Storage temperature
* _{f = 100 Hz, Duty cycle = 0.1 %}
P_D
180
mW
I_F
100
mA
I_FP*
1
A
V_R
3
V
T_opr –25 to+85 ˚C
T_stg –30 to +100 ˚C
4.5±0.3
ø2.4
Unit : mm
2.9±0.25
1.2
1.7±0.2
0.9
0.8
2-1.2±0.3
2-0.45±0.15
1
2
2.54
R1.2
R0.6
0.45±0.15
1: Cathode
2: Anode
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min typ
Radiant power
Peak emission wavelength
Spectral half band width
P_O
I_F = 50mA
λ_P
I_F = 50mA
∆λ
I_F = 50mA
6
10
880
50
Forward voltage (DC)
V_F
I_F = 100mA
1.5
Reverse current (DC)
I_R
V_R = 3V
Capacitance between pins
C_t
V_R = 0V, f = 1MHz
50
Half-power angle
θ
The angle in which radiant intencity is 50%
40
Cutoff frequency
f_C*
I_FP = 50mA + 10mA_p-p
12
( ) * Frequency when modulation optical power decreases by 3dB from 1MHz. 10 log PO(fCMHz) = – 3
P_O(1MHz)
max
1.8
10
Unit
mW
nm
nm
V
µA
pF
deg.
MHz
1