LN671 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – GaAlAs Infrared Light Emitting Diode

Infrared Light Emitting Diodes
LN671
GaAlAs Infrared Light Emitting Diode
Light source for distance measuring systems
Features
High-power output, high-efficiency : P_O = 10 mW (typ.)
Fast response and high-speed modulation capability :
t_r, t_f = 30 ns(typ.)
Small plastic package
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Symbol Ratings Unit
Power dissipation
Forward current (DC)
Pulse forward current
Reverse voltage (DC)
Operating ambient temperature
Storage temperature
* _{f = 100 Hz, Duty cycle = 0.1 %}
P_D
130
mW
I_F
70
mA
I_FP*
1
A
V_R
3
V
T_opr –25 to +85 ˚C
T_stg –30 to +100 ˚C
5.3 max.
5.0±0.1
2.54±0.1
4
3
Unit : mm
1.8±0.3
0.8±0.2
Epin ø3.2
4-0.6
+0.1
–0.2
0.2
+0.1
–0.05
4-0.5±0.15
1
2
10˚
10˚
5˚
5˚ 1: Anode
2: Common Cathode
3: NC
4: Common Cathode
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Radiant power
Peak emission wavelength
Spectral half band width
Forward voltage (DC)
Reverse current (DC)
Rise time
Fall time
Half-power angle
Symbol
P_O
λ_P
∆λ
V_F
I_R
t_r
t_f
θ
Conditions
I_F = 50mA
I_F = 50mA
I_F = 50mA
I_F = 50mA
V_R = 3V
I_FP = 50mA
I_FP = 50mA
The angle in which radiant intencity is 50%
min typ max Unit
6
10
mW
880
nm
50
nm
1.4 1.8
V
10
µA
30
ns
30
ns
50
deg.
1