LN66L Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – GaAs Infrared Light Emitting Diode

Infrared Light Emitting Diodes
LN66L
GaAs Infrared Light Emitting Diode
For optical control systems
Features
High-power output, high-efficiency :P_O = 8 mW (typ.)
Emitted light spectrum suited for silicon photodetectors
Good radiant power output linearity with respect to input current
Wide directivity : θ = 25 deg. (typ.)
Transparent epoxy resin package
Long lead-wire type
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Symbol Ratings Unit
Power dissipation
P_D
160
mW
Forward current (DC)
Pulse forward current
Reverse voltage (DC)
I_F
100
mA
I_FP*
1.5
A
V_R
3
V
Operating ambient temperature T_opr –25 to +85 ˚C
Storage temperature
* _{f = 100 Hz, Duty cycle = 0.1 %}
T_stg – 40 to +100 ˚C
ø5.0±0.2
Unit : mm
2-0.8 max.
2-0.6±0.15
2.54
21
1: Cathode
2: Anode
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Radiant power
Peak emission wavelength
Spectral half band width
Forward voltage (DC)
Reverse current (DC)
Capacitance between pins
Half-power angle
Symbol
P_O*
λ_P
∆λ
V_F
I_R
C_t
θ
Conditions
I_F = 50mA
I_F = 50mA
I_F = 50mA
I_F = 100mA
V_R = 3V
V_R = 0V, f = 1MHz
The angle in which radiant intencity is 50%
* _{PO Classifications}
Class
R
S
P_O (mW)
5 to 8
>7
min typ max Unit
5
8
mW
950
nm
50
nm
1.3 1.6
V
10
µA
35
pF
25
deg.
1