LN66F Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – GaAs Infrared Light Emitting Diode

Infrared Light Emitting Diodes
LN66F
GaAs Infrared Light Emitting Diode
For light source of remote control systems
Features
High-power output, high-efficiency : I_e = 13.0 mW/sr (min.)
Emitted light spectrum suited for silicon photodetectors
Narrow directivity : θ = 15 deg. (typ.)
Transparent epoxy resin package
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Symbol Ratings Unit
Power dissipation
P_D
75
mW
Forward current (DC)
Pulse forward current
Reverse voltage (DC)
I_F
50
mA
I_FP*
1.5
A
V_R
3
V
Operating ambient temperature T_opr –25 to +85 ˚C
Storage temperature
* _{f = 100 Hz, Duty cycle = 0.1 %}
T_stg – 40 to +100 ˚C
ø5.0±0.2
Unit : mm
2-1.0±0.15
2-0.6±0.15
2.54
21
1: Cathode
2: Anode
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Radiant intensity at center
Peak emission wavelength
Spectral half band width
Forward voltage (DC)
Pulse forward voltage
Reverse current (DC)
Capacitance between pins
Half-power angle
* _{f = 100 Hz, Duty cycle = 0.1 %}
Symbol
I_e
λ_P
∆λ
V_F
V_FP*
I_R
C_t
θ
Conditions
I_F = 50mA
I_F = 50mA
I_F = 50mA
I_F = 50mA
I_FP = 1.0A
V_R = 3V
V_R = 0V, f = 1MHz
The angle in which radiant intencity is 50%
min typ max Unit
13
mW/sr
950
nm
50
nm
1.35 1.50
V
3.0
V
10
µA
20
pF
15
deg.
1