LN59-LNA2702L Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – GaAs Bi-directional Infrared Light Emitting Diodes

Infrared Light Emitting Diodes
LN59, LNA2702L (LN59L)
GaAs Bi-directional Infrared Light Emitting Diodes
For light source of VCR (VHS System)
LN59
4.0±0.2
ø2.5±0.2
Features
Two-way directivity
High-power output, high-efficiency : P_O = 1.8 mW (min.)
Small resin package
Long lifetime, high reliability
Long lead wire type (LNA2702L)
2-0.8 max.
2-0.5±0.1
1
C0.5
2
2.54
Applications
Light source for tape end sensor of VCR and video camera
recorder of VHS system
Light source for 2-bit photo sensor
LNA2702L
ø2.5±0.2 ^4.0±0.2
Unit : mm
1.8±0.2
2-R1.25±0.1
0.5±0.1
1: Anode
2: Cathode
1.8±0.2
2-R1.25±0.1
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Symbol Ratings Unit
Power dissipation
Forward current (DC)
Pulse forward current
Reverse voltage (DC)
Operating ambient temperature
Storage temperature
* _{f = 100 Hz, Duty cycle = 0.1 %}
P_D
75
mW
I_F
50
mA
I_FP*
1
A
V_R
3
V
T_opr –25 to +85 ˚C
T_stg – 40 to +100 ˚C
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
Radiant power
Peak emission wavelength
P_O*
I_F = 50mA
λ_P
I_F = 20mA
Spectral half band width
∆λ
I_F = 20mA
Forward voltage (DC)
V_F
I_F = 50mA
Reverse current (DC)
I_R
V_R = 3V
Capacitance between pins
C_t
V_R = 0V, f = 1MHz
* _{Radiant power PO shows each value of radiant flux P1 and P2 in two directions.}
2-0.8 max.
2-0.5±0.1
2-0.7 max.
0.5±0.1
1
C0.5
2-0.5±0.1
2
2.54
1: Anode
2: Cathode
min typ max Unit
1.8
mW
950
nm
50
nm
1.3 1.5
V
10
µA
35
pF
P1
P2
Note) The part numbers in the parenthesis show conventional part number.
1