LN58 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – GaAs Infrared Light Emitting Diode

Infrared Light Emitting Diodes
LN58
GaAs Infrared Light Emitting Diode
For optical control systems
Features
High-power output, high-efficiency : P_O = 3.5 mW (typ.)
Emitted light spectrum suited for silicon photodetectors
Infrared light emission close to monochromatic light :
λ_P = 950 nm (typ.)
Small size, thin side-view type package
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Symbol Ratings Unit
Power dissipation
Forward current (DC)
Pulse forward current
Reverse voltage (DC)
Operating ambient temperature
Storage temperature
* _{f = 100 Hz, Duty cycle = 0.1 %}
P_D
75
mW
I_F
50
mA
I_FP*
1
A
V_R
3
V
T_opr –25 to +85 ˚C
T_stg –30 to+100 ˚C
4.5±0.3
ø2.4
Unit : mm
2.9±0.25
1.2
1.7±0.2
0.9
0.8
2-1.2±0.3
2-0.45±0.15
1
2
2.54
R1.2
R0.6
0.45±0.15
1: Cathode
2: Anode
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Radiant power
Peak emission wavelength
Spectral half band width
Forward voltage (DC)
Reverse current (DC)
Capacitance between pins
Half-power angle
P_O
I_F = 50mA
1.8 3.5
mW
λ_P
I_F = 50mA
950
nm
∆λ
I_F = 50mA
50
nm
V_F
I_F = 50mA
1.5
V
I_R
V_R = 3V
10
µA
C_t
V_R = 0V, f = 1MHz
35
pF
θ
The angle in which radiant intencity is 50%
35
deg.
1