LN55 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – GaAs Infrared Light Emitting Diode

Infrared Light Emitting Diodes
LN55
GaAs Infrared Light Emitting Diode
For optical control systems
Features
High-power output, high-efficiency : P_O = 3.5 mW (typ.)
Suited for use with silicon photodetectors
Infrared light emission close to monochromatic light : λ_P = 950 nm (typ.)
High-speed modulation capability
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Symbol Ratings Unit
Power dissipation
Forward current (DC)
Pulse forward current
Reverse voltage (DC)
Operating ambient temperature
Storage temperature
* _{f = 100 Hz, Duty cycle = 0.1 %}
P_D
75
mW
I_F
50
mA
I_FP*
1
A
V_R
3
V
T_opr –25 to +85 ˚C
T_stg –30 to +100 ˚C
ø3.5±0.2
4.5±0.3
Unit : mm
4.2±0.3
2.3 1.9
2-0.98±0.2
2-0.45±0.15
0.45±0.15
2.54
1.2
R1.75
12
1: Cathode
2: Anode
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Radiant power
Peak emission wavelength
Spectral half band width
Forward voltage (DC)
Reverse current (DC)
P_O
I_F = 50mA
λ_P
I_F = 50mA
∆λ
I_F = 50mA
V_F
I_F = 50mA
I_R
V_R = 3V
1.8 3.5
mW
950
nm
50
nm
1.5
V
10
µA
Capacitance between pins
C_t
V_R = 0V, f = 1MHz
50
pF
Half-power angle
θ
The angle in which radiant intencity is 50%
35
deg.
I_F — Ta
60
50
40
30
20
10
0
– 25 0
20 40 60 80 100
Ambient temperature Ta (˚C )
I_FP — Duty cycle
10 ²
Ta = 25˚C
10
1
10 ^–1
10 ^–2
10 ^–3
10 ^–2
10 ^–1
1
10
10 ²
Duty cycle (%)
I_F — V_F
80
Ta = 25˚C
70
60
50
40
30
20
10
0
0
0.4
0.8
1.2
1.6
Forward voltage V_F (V)
1