LN184 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – GaAlAs Infrared Light Emitting Diode

Infrared Light Emitting Diodes
LN184
GaAlAs Infrared Light Emitting Diode
Light source for distance measuring systems
Features
High-power output, high-efficiency : P_O = 5 mW (typ.)
Fast response and high-speed modulation capability : t_r, t_f = 20 ns(typ.)
Infrared light emission close to monochromatics light : λ_P = 880 nm
(typ.)
Narrow directivity using spherical lenses; works well with optical
systems in auto focus systems
ø4.6±0.15
Unit : mm
Glass window
Spherical lens
2
2.45±0.25
2-ø0.45±0.05
1
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Symbol Ratings Unit
Power dissipation
P_D
190
mW
Forward current (DC)
I_F
90
mA
Pulse forward current
I_FP*
230
mA
Reverse voltage (DC)
V_R
3
V
Operating ambient temperature T_opr –25 to +85 ˚C
Storage temperature
T_stg – 40 to +100 ˚C
* _{Pulse conditions : Pulse of f = 10 kHz and duty cycle = 50% modulated}
with pulse of f = 0.375 Hz (1.6 s) and duty cycle = 37.5%
ø4.0±0.1
ø5.75max.
1: Anode
2: Cathode
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Radiant power
Peak emission wavelength
Spectral half band width
Forward voltage (DC)
Reverse current (DC)
Rise time
Fall time
Half-power angle
Symbol
P_O
λ_P
∆λ
V_F
I_R
t_r
t_f
θ
Conditions
I_F = 100mA
I_F = 100mA
I_F = 100mA
I_F = 100mA
V_R = 3V
I_FP = 100mA
I_FP = 100mA
The angle in which radiant intencity is 50%
min typ max Unit
3.5
mW
880
nm
50
nm
1.55 1.9
V
10
µA
20
ns
20
ns
20
deg.
1