LN175 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – GaAlAs Infrared Light Emitting Diode

Infrared Light Emitting Diodes
LN175
GaAlAs Infrared Light Emitting Diode
For optical control systems
Features
High-power output, high-efficiency : P_O = 12 mW (typ.)
Emitted light spectrum suited for silicon photodetectors :
λ_P = 900 nm (typ.)
Good radiant power output linearity with respect to input current
Wide directivity : θ = 120 deg. (typ.)
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Symbol Ratings Unit
Power dissipation
Forward current (DC)
Pulse forward current
Reverse voltage (DC)
Operating ambient temperature
Storage temperature
* _{f = 100 Hz, Duty cycle = 0.1 %}
P_D
170
mW
I_F
100
mA
I_FP*
2
A
V_R
3
V
T_opr –25 to +85 ˚C
T_stg – 40 to +100 ˚C
4.5±0.15
3.5±0.15
Unit : mm
2.1±0.15
1.6±0.15
0.8±0.1
2-1.2±0.3
2-0.45±0.15
1 _2.54 2
0.45±0.15
1: Cathode
2: Anode
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Radiant power
Peak emission wavelength
Spectral half band width
Forward voltage (DC)
Reverse current (DC)
Capacitance between pins
Response time
Half-power angle
Symbol
P_O
λ_P
∆λ
V_F
I_R
C_t
t_r, t_f
θ
Conditions
I_F = 100mA
I_F = 100mA
I_F = 100mA
I_F = 100mA
V_R = 3V
V_R = 0V, f = 1MHz
I_F = 100mA
The angle in which radiant intencity is 50%
min typ max Unit
7
12
mW
900
nm
70
nm
1.4 1.7
V
10
µA
50
pF
700
ns
120
deg.
1