LN172 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – GaAlAs Infrared Light Emitting Diode

Infrared Light Emitting Diodes
LN172
GaAlAs Infrared Light Emitting Diode
For optical control systems
Features
High-power output, high-efficiency : P_O = 12 mW (typ.)
Light emitting spectrum suited for silicon photodetectors :
λ_P = 900 nm (typ.)
Good optical power output linearity with respect to input current
Wide directivity : θ = 100 deg. (typ.)
Long lifetime, high reliability
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Symbol Ratings Unit
Power dissipation
Forward current (DC)
Pulse forward current
Reverse voltage (DC)
Operating ambient temperature
Storage temperature
* _{f = 100 Hz, Duty cycle = 0.1 %}
P_D
170
mW
I_F
100
mA
I_FP*
2
A
V_R
3
V
T_opr –25 to +85 ˚C
T_stg –30 to +100 ˚C
ø4.2
+0.2
–0.1
Unit : mm
2-ø0.45±0.05
21
2.54±0.25 _{1: Cathode}
2: Anode
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Radiant power
P_O
I_F = 100mA
7
12
mW
Peak emission wavelength
λ_P
I_F = 100mA
900
nm
Spectral half band width
∆λ
I_F = 100mA
70
nm
Forward voltage (DC)
V_F
I_F = 100mA
1.4 1.7
V
Reverse current (DC)
I_R
V_R = 3V
10
µA
Capacitance between pins
C_t
V_R = 0V, f = 1MHz
50
pF
Response time
t_r, t_f
I_F = 100mA
700
ns
Half-power angle
θ
The angle in which radiant intencity is 50%
100
deg.
1