LN162S Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – GaAs Infrared Light Emitting Diode

Infrared Light Emitting Diodes
LN162S
GaAs Infrared Light Emitting Diode
For optical control systems
Features
High-power output, high-efficiency : P_O = 3.5 mW (typ.)
Infrared light emission close to monochromatic light :
λ_P = 950 nm (typ.)
Small ceramic package
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Symbol Ratings Unit
Power dissipation
P_D
75
mW
Forward current (DC)
Pulse forward Current
Reverse voltage (DC)
I_F
50
mA
I_FP*
1
A
V_R
3
V
Operating ambient temperature T_opr –25 to +85 ˚C
Storage temperature
* _{f = 100 Hz, Duty cycle = 0.1 %}
T_stg –30 to +100 ˚C
ø3.0±0.15
Unit : mm
ø0.3±0.05
ø0.45±0.05
0.9±0.15
21
1: Anode
2: Cathode
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Radiant power
Peak emission wavelength
Spectral half band width
Forward voltage (DC)
Reverse current (DC)
Capacitance between pins
Half-power angle
Symbol
P_O
λ_P
∆λ
V_F
I_R
C_t
θ
Conditions
I_F = 50mA
I_F = 50mA
I_F = 50mA
I_F = 50mA
V_R = 3V
V_R = 0V, f = 1MHz
The angle in which radiant intencity is 50%
min typ max Unit
1.5 3.5
mW
950
nm
50
nm
1.2 1.5
V
10
µA
50
pF
80
deg.
1