LN152 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – GaAs Infrared Light Emitting Diode

Infrared Light Emitting Diodes
LN152
GaAs Infrared Light Emitting Diode
For optical control systems
Features
High-power output, high-efficiency : P_O = 10 mW (typ.)
Wide directivity, matched for external optical systems : θ = 100 deg.
Infrared light emission close to monochromatic light :
λ_P = 950 nm (typ.)
Optimum for mesuring instruments and control equipments
in conbination with silicon photodetectors
High-speed modulation
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Symbol Ratings Unit
Power dissipation
Forward current (DC)
Pulse forward current
Reverse voltage (DC)
Operating ambient temperature
Storage temperature
* _{f = 100 Hz, Duty cycle = 0.1 %}
P_D
160
mW
I_F
100
mA
I_FP*
1.5
A
V_R
3
V
T_opr –25 to +85 ˚C
T_stg –30 to +100 ˚C
Unit : mm
2-ø0.45±0.05
–0+.10.15
21
2.54±0.2
1: Anode
2: Cathode
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Radiant power
Peak emission wavelength
Spectral half band width
Forward voltage (DC)
Reverse current (DC)
Capacitance between pins
Rise time
Fall time
Half-power angle
P_O
I_F = 100mA
5
10
mW
λ_P
I_F = 100mA
950
nm
∆λ
I_F = 100mA
50
nm
V_F
I_F = 100mA
1.3 1.6
V
I_R
V_R = 3V
10
µA
C_t
V_R = 0V, f = 1MHz
60
pF
t_r
t_f
I_FP = 100mA
1
µs
1
µs
θ
The angle in which radiant intencity is 50%
100
deg.
1