LN145W Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – GaAlAs Red Light Emitting Diode

Visible Light Emitting Diodes (Red)
LN145W
GaAlAs Red Light Emitting Diode
Light source for optical fiber communications,
Features
Red light emission close to monochromatic light : λ_P = 700 nm
High-power output, high-efficiency
High coupling characteristics and suits to a plastic fiber
High-speed response : –3dB modulation of 10MHz
Side-view flat resin package
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Symbol Ratings Unit
Power dissipation
P_D
120
mW
Forward current (DC)
Pulse forward current
I_F
40
mA
I_FP*
400
mA
Reverse voltage (DC)
V_R
3
V
Operating ambient temperature
Storage temperature
* _{tw = 10 µs, Duty cycle = 10 %}
T_opr –25 to +85 ˚C
T_stg –30 to +100 ˚C
4.5±0.15
3.5±0.15
Unit : mm
2.1±0.15
1.6±0.15
0.8±0.1
2-1.2±0.3
2-0.45±0.15
1
2
0.45±0.2
2.54±0.2
1: Cathode
2: Anode
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Radiant power
Peak emission wavelength
Spectral half band width
Forward voltage (DC)
Reverse current (DC)
Half-power angle
Response time
Cutoff frequency
Symbol
P_O
λ_P
∆λ
V_F
I_R
θ
t_r, t_f
f_C*
Conditions
I_F = 20mA
I_F = 20mA
I_F = 20mA
I_F = 20mA
V_R = 3V
The angle in which radiant intencity is 50%
I_FP = 100mA
*_{Cutoff frequency}
f_C
:
Frequency
at
which
10
×
log
P_O( at
P _O( at
f=
f=
f_C)
1MHz)
=–3
[Element moisture resistance]
It is difficult to guarantee that the LN145W will meet the moisture
resistance specifications (MIL-STD-202D) which are
commonly guaranteed for semiconductors.
min typ max Unit
2.5
4
mW
700
nm
35
nm
1.8 2.2
V
100
µA
80
deg.
30
ns
10
MHz
1