H733 Datasheet, PDF (1/1 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – PNP SILICON TRANSISTOR

K I SEMICONDUCTOR
PNP S I L I C O N T R A N S I S T O R
A733
█ APPLICATIONS
The H733 is designed for driver stage of AF amplifier
And low speed switching.
█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）
T_stg——Storage Temperature………………………… -55~150℃
T_j——Junction Temperature…………………………………150℃
P_C——Collector Dissipation…………………………………250mW
V_CBO——Collector-Base Voltage………………………………-60V
V_CEO——Collector-Emitter Voltage……………………………-50V
V_EBO——Emitter-Base Voltage………………………………-5V
I_C——Collector Current……………………………………-150mA
TO-92
1―Emitter，E
2―Base，B
3―Collector，C
█ ELECTRICAL CHARACTERISTICS（T_a=25℃）
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
BVCBO Collector-Base Breakdown Voltage
-60
V I_C=-100μA, I_E=0
BVCEO Collector-Emitter Breakdown Voltage
-50
V I_C=-10mA, I_B=0
BVEBO Emitter-Base Breakdown Voltage
-5
V I_E=-10μA，I_C=0
HFE DC Current Gain
90
600
V_CE=-6V, I_C=-1mA
VCE(sat) Collector- Emitter Saturation Voltage
-0.3 V I_C=-100mA, I_B=-10mA
VBE(ON) Base-Emitter On Voltage
-0.5
-0.8 V V_CE=-6V, I_C=-1mA
ICBO Collector Cut-off Current
-100 nA V_CB=-60V, I_E=0
IEBO Emitter Cut-off Current
-100 nA V_EB=-5V, I_C=0
fT
Current Gain-Bandwidth Product
180
MHz V_CE=-6V, I_C=-10mA
Cob Output Capacitance
4.5
pF
V_CB=-10V,
f=1MHz
I_E=0 ，
█ hFE Classification
R
90—180
Q
135—270
P
200—400
K
300—600