GN8062 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – GaAs IC

GaAs MMICs
GN8062
GN8062
GaAs IC
For semiconductor laser drive
Unit : mm
s Features
q High-speed switching
q High output
q Pulse current and DC bias current can be controlled.
s Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Symbol
Rating
Unit
Power supply voltage
V_DD
6
V
V_SS
–6
V
Pin voltage
Power current
V_IN
– 0.5 to V_DD–1.5
V
V_Ip* ⁵
1.5 to V_DD
V
V_OUT* ¹
V_DD
V
I_DD* ⁴
50
mA
I_SS
40
mA
Output current
Allowable power dissipation
I_OUT
P_D* ²
145
mA
700
mW
Channel temperature
Tch
150
˚C
Storage temperature
Tstg
– 55 to +150
˚C
Operating ambient temperature
Topr* ³
–10 to +75
˚C
* 1 Do not apply the voltage higher than the set VDD.
* 2 Guaranteed value of the unit at Ta= 25˚C.
* 3 Range in which the IC circuit function operates and not the guaranteed range of
electric characteristics.
* 4 IDD is a current when the pulse output current is zero.
* 5 Voltage when the constant current source has been connected.
1
8
2
7
3
6
4
5
6.4±0.2
0.7min.
4.5max. 4.0max.
7.62±0.2
0 to 15˚
1 : GND
2 : NC
0.35max.
3 : NC
4 : OUT
5 : VIP
6 : VDD
7 : VIN
8 : VSS
8-Lead Plastic DIL Package
s Electrical Characteristics (Ta = 25˚C)
Parameter
Pulse output current
Supply current
Input voltage
Rise time
Fall time
Symbol
I_pmax.
I_pmin.
I_DD* ¹
I_SS
V_IH
V_IL
t_r* ²
t_f* ²
Test circuit
1
1
2
2
3
3
Condition
V_DD= 5V, V_SS= –5V, V_IN= 2V, I_p=120mA, R_L=10Ω
V_DD= 5V, V_SS= –5V,V_IN= 0.4V, I_p=120mA, R_L=10Ω
V_DD= 5V, V_SS= – 5V, V_IN= 0.4V
I_p= 0, R_L=10Ω
V_DD= 5V, V_SS= – 5V, I_p=100mA
R_L=10Ω
Min
Typ
Max
Unit
100
120
mA
1
5
mA
35
50
mA
25
40
mA
2.5
V
0.4
V
7
ns
5
ns