GN1010 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – GaAs N-Channel MES IC

GaAs MMICs
GN1010
GaAs N-Channel MES IC
For high-output high-gain amplification
s Features
q General-use wide-band amplifier
q Low noise
q With bandwidth control pin
GN1010
0.65±0.15
+0.2
2.8 –0.3
+0.2
1.5 –0.3
Unit : mm
0.65±0.15
0.5R
4
1
3
2
s Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Power supply voltage
Drain current
Gate current
Allowable power dissipation
Channel temperature
Storage temperature
Symbol
Rating
Unit
VDS
6
V
VGS
–4
V
ID
45
mA
IG
3
mA
PD
200
mW
Tch
150
˚C
Tstg
– 55 to +150
˚C
0.4±0.2
1 : Source
2 : Drain
3:C
4 : Gate
Mini Type Package (4-pin)
s Equivalent Circuit
2
3
4
s Electrical Characteristics (Ta = 25˚C)
Parameter
Drain current
Noise figure
Power gain
I_dB compression output
Symbol
I_DD ^{* 1}
NF ^{* 2}
PG ^{* 2}
P_O ^{* 2}
Condition
V_DS= 3V
V_DS= 3V, f= 0.5GHz
V_DS= 3V, f=1.8GHz
V_DS= 3V, f= 0.5GHz
V_DS= 3V, f=1.8GHz
V_DS= 3V, f= 0.5GHz
V_DS= 3V, f=1.8GHz
1
Min
Typ
Max Unit
5
30
45
mA
2
3
dB
10
5
dB
9
8
15
dBm
* 1 _{IDD rank classification}
Rank
P
I_DD(mA)
5 to 20
Q
15 to 30
R
25 to 45
* 2 _{NF, PG, PO test circuit}
VD
C
Cc
C
Cf
Cc
G
S
C = 1000 pF
Cc = 200 pF
Cf = 27 pF