GN02035B Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – GaAs IC(with built-in ferroelectric)

GaAs MMIC
GN02035B
GaAs IC (with built-in ferroelectric)
For mixer with built-in local amplifier of cellular phone
Other communication equipment
s Features
• Super miniature S-Mini 6-pin package (2 125 size)
• Receiver mixer : Low distortion with local amplifier
s Absolute Maximum Ratings T_a=25°C
Parameter
Symbol Ratings
RF section
Lo input
section
Lo output
section
Mix·Lo
section
IF section
Overall
Input voltage
Input current
Max input power
Input voltage
Input current
Max input power
Output voltage
Output current
Input voltage
Input current
Output voltage
Output current
Allowable power dissipation
Channel temperature
Storage temperature
V_IN
I_IN
P_IN
V_IN
I_IN
P_IN
V_OUT
I_OUT
V_IN
I_IN
V_OUT
I_OUT
P_D
T_ch
T_stg
−3
1
10
−3
1
10
5
10
−3
1
5
10
100
150
−55 to +150
Unit
V
mA
dBm
V
mA
dBm
V
mA
V
mA
V
mA
mW
°C
°C
0.2±0.05
6
5
4
R0.2
1
2
3
0.65 0.65
2.0±0.1
Unit : mm
0.12
+0.05
−0.02
6 - 0° to 10°
1 : RF in
4 : Lo out
2 : GND
5 : Mix·Lo in
3 : Lo in
6 : IF out
S Mini Type Package (6-pin)
Marking Symbol : KD
s Electrical Characteristics T_a=25°C±3°C
Parameter
Mixer current ^*1
Local amplifier current ^*1
Conversion gain ^*1
Output third harmonics mutual
modulation distortion ^*1
Noise figure ^{*1, 2}
Symbol
I_MIX
I_Lo
CG
OIP3
NF
Conditions
min
V_IFOUT=3 V, f_RF=850 MHz
f_Lo=740 MHz
V_LoOUT=3 V, f_RF=850 MHz
f_Lo=740 MHz
V_IFOUT=V_LoOUT=3 V
f_RF=850 MHz, f_Lo=740 MHz
V_IFOUT=V_LoOUT=3 V, f_RF=850.1 MHz
f_Lo=740.0 MHz, f_IF=110.0 MHz or
110.1 MHz, f_IM3=109.9 MHz or 110.2 MHz
V_IFOUT=V_LoOUT=3 V, f_Lo=740 MHz
f_IF=110 MHz
typ max Unit
4.3
mA
3.2
mA
11
dB
7.0
dBm
6.2
dB
Note) *1 : P_RF=−27 dBm, P_Lo=−7 dBm
*2 : Design-guaranteed items.
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