GN01096B Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – GaAs IC(with built-in ferroelectric)

GaAs MMIC
GN01096B
GaAs IC (with built-in ferroelectric)
For low noise amplifier of cellular phone
Other communication equipment
0.2±0.05
6
5
4
Unit: mm
0.12
+0.05
−0.02
s Features
• Super miniature S-Mini 6-pin package (2125 size)
• Receiver amplifier : Low distortion with built-in gain control function
s Absolute Maximum Ratings T_a=25 °C
Parameter
Symbol Ratings
Unit
Power supply voltage
Circuit current
Gate control voltage
Max input power
Allowable power dissipation
Operating ambient temperature
Storage temperature
V_DD
I_DD
V_AGC
P_IN
P_D
T_opr
T_stg
8
20
0 to 4
−5
150
−30 to +90
−40 to +120
V
mA
V
dBm
mW
°C
°C
R0.2
1
2
3
0.65 0.65
2.0±0.1
6 - 0° to 10°
EIAJ : SC-88
1 : RF_IN
2 : GND
4 : V_DD
5 : GND
3 : V_AGC
6 : Source
S Mini Type Package (6-pin)
Marking Symbol : KW
s Electrical Characteristics V_DD=2.9 V, P_IN=−25 dBm, T_a=25 °C±3 °C
Parameter
Symbol
Conditions
min typ max
Circuit current ^*1
Power gain 1 ^*1
Power gain 2 ^*1
Noise figure 1 ^{*1, 2}
Noise figure 2 ^{*1, 2}
I_DD
V_AGC=1.5 V, f=850 MHz
PG1
V_AGC=1.5 V, f=850 MHz
PG2
V_AGC=0.1 V, f=850 MHz
NF1
V_AGC=1.5 V, f=832 MHz
f=850 MHz, f=870 MHz
NF2
V_AGC=0.1 V, f=832 MHz
f=850 MHz, f=870 MHz
6.5 10
12.5 15.0 17.5
−10.0 −6.5 −3.0
1.4 2.0
17 22
Dynamic range ^*1
Input return loss ^{*1, 2}
Output return loss ^{*1, 2}
Third input intersept point ^{*1, 2}
Third output intersept point ^{*1, 2}
DR
S11
S22
IIP3
OIP3
V_AGC=1.5 V to 0.1 V, f=850 MHz
V_AGC=1.5 V, f=850 MHz
V_AGC=1.5 V, f=850 MHz
V_AGC=1.5 V, f=850 MHz/850.9 MHz
V_AGC=1.5 V, f=850 MHz/850.9 MHz
18 22 27
−10 −6
−10 −6
4.0 5.8
16.5 21.0
Note) *1 : Refer to measurement circuit.
*2 : Design-guaranteed items.
Unit
mA
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
1