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GN01094B Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – GaAs IC (with built-in ferroelectric) | |||
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GaAs MMIC
GN01094B
GaAs IC (with built-in ferroelectric)
For the preamplifier of the transmitting section in a cellular phone
Other communication equipment
0.2±0.05
6
5
4
Unit : mm
0.12
+0.05
â0.02
s Features
⢠Super miniature S-Mini 6-pin package (2125 size)
⢠Transmitter amplifier : Wide dynamic range on low operation current
: Gain control function built-in
s Absolute Maximum Ratings Ta=25 °C
Parameter
Symbol Ratings
Unit
Power supply voltage
Circuit current
Gate control voltage
Reference voltage
Max input power
Allowable power dissipation
Operating ambient temperature
Storage temperature
VDD
IDD
VAGC
VREF
PIN
PD
Topr
Tstg
8
80
0 to 3
5
â5
150
â30 to +90
â40 to +120
V
mA
V
V
dBm
mW
°C
°C
R0.2
1
2
3
0.65 0.65
2.0±0.1
6 - 0° to 10°
EIAJ : SC-88
1 : VDD2
4 : RFIN
2 : VREF
5 : GND
3 : VDD1
6 : VAGC
S Mini Type Package (6-pin)
Marking Symbol : KV
s Electrical Characteristics VDD1=VDD2=VREF=3.0 V, f=906 MHz, Ta=25 °C±3 °C
Parameter
Circuit current *1
Power gain 1 *1
Power gain 2 *1
Dynamic range
Adjacent channel leakage
power (ACP) *1, 2
Symbol
IDD
PG1
PG2
DR
ACP
Conditions
VAGC=2.0 V, PIN=â20 dBm
VAGC=2.0 V, PIN=â20 dBm
VAGC=0.5 V, PIN=â20 dBm
PG1âPG2
PIN=â15 dBm, POUT=5 dBm
±900 kHz Detuning, 30 kHz Bandwidth
min typ max Unit
32 40 mA
27 31
dB
â14 â8
dB
35 45
dB
â54 â49 dBc
Note) *1 : Refer to measurement circuit.
*2 : Design-guaranteed items.
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