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GN01094B Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – GaAs IC (with built-in ferroelectric)
GaAs MMIC
GN01094B
GaAs IC (with built-in ferroelectric)
For the preamplifier of the transmitting section in a cellular phone
Other communication equipment
0.2±0.05
6
5
4
Unit : mm
0.12
+0.05
−0.02
s Features
• Super miniature S-Mini 6-pin package (2125 size)
• Transmitter amplifier : Wide dynamic range on low operation current
: Gain control function built-in
s Absolute Maximum Ratings Ta=25 °C
Parameter
Symbol Ratings
Unit
Power supply voltage
Circuit current
Gate control voltage
Reference voltage
Max input power
Allowable power dissipation
Operating ambient temperature
Storage temperature
VDD
IDD
VAGC
VREF
PIN
PD
Topr
Tstg
8
80
0 to 3
5
−5
150
−30 to +90
−40 to +120
V
mA
V
V
dBm
mW
°C
°C
R0.2
1
2
3
0.65 0.65
2.0±0.1
6 - 0° to 10°
EIAJ : SC-88
1 : VDD2
4 : RFIN
2 : VREF
5 : GND
3 : VDD1
6 : VAGC
S Mini Type Package (6-pin)
Marking Symbol : KV
s Electrical Characteristics VDD1=VDD2=VREF=3.0 V, f=906 MHz, Ta=25 °C±3 °C
Parameter
Circuit current *1
Power gain 1 *1
Power gain 2 *1
Dynamic range
Adjacent channel leakage
power (ACP) *1, 2
Symbol
IDD
PG1
PG2
DR
ACP
Conditions
VAGC=2.0 V, PIN=−20 dBm
VAGC=2.0 V, PIN=−20 dBm
VAGC=0.5 V, PIN=−20 dBm
PG1−PG2
PIN=−15 dBm, POUT=5 dBm
±900 kHz Detuning, 30 kHz Bandwidth
min typ max Unit
32 40 mA
27 31
dB
−14 −8
dB
35 45
dB
−54 −49 dBc
Note) *1 : Refer to measurement circuit.
*2 : Design-guaranteed items.
1