GN01081B Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – GaAs IC with built-in ferroelectric

GaAs MMICs
GN01081B
GaAs IC (with built-in ferroelectric)
Driver amplifier for PCS
s Features
q High output amplifier
q Low distortion
s Absolute Maximum Ratings (Ta = 25°C)
Parameter
Symbol Ratings
Unit
Power supply voltage
V_DD
Circuit current
I_DD
Max input power
P_in
Allowable power dissipation
P_D
Operating ambient temperature T_opr
Storage temperature
T_stg
8
V
100
mA
−5
dBm
450
mW
−30 to +90
°C
−40 to +120
°C
unit: mm
12
1
2
3
4
5
Part B
10
9
8
7
6
11
2-0.55±0.1
2~12˚
Detail of Part A & B
Part A
2.2±0.2
3.4±0.2
2~12˚
0.3±0.1
1: NC
2: V_DD2
3: Source2
7: V_DD1
8: NC
9: IN1
4: IN2
10: NC
5: NC
11: GND
6: NC
12: GND
ESOF-10D Type Package
s Electrical Characteristics (V_DD = 3.0V, f = 1880MHz, Pout = 11.0dBm, Ta = 25 ± 3°C)
Parameter
Symbol Test method
Conditions
min
typ
max
Circuit current
I_DD
Power gain
PG
Adjacent channel
ACP1
leakage power (ACP) 1
Adjacent channel
ACP2
leakage power (ACP) 2
(1)
(1)
22
(1) IS − 95 modulation, ±1.25MHz Detuning
(2) 30kHz Bandwidth
(1) IS − 95 modulation, ±2.25MHz Detuning
(2) 30kHz Bandwidth
60
75
25
27
−56
−51
−71
−66
Test method (1): Measurement circuit is shown in the following diagram.
(2): This item is the sampling guaranteed item.
s Measurement Circuit
5.6nH
20Ω
IN
V_DD1
2pF
5.6nH
100pF+1000pF
150Ω
10 9 8 7 6
12
11
12345
OUT
33pF
33nH
100pF
10Ω
100pF+47nF
V_DD2
2pF
1.5nH
1.5nH
1pF
Unit
mA
dB
dBc
dBc
1