FC8V33030L Datasheet, PDF (1/7 Pages) Panasonic Semiconductor – Dual N-channel MOSFET For DC-DC Converter

FC8V33030L
Dual N-channel MOSFET
For DC-DC Converter
FC8V33030L
Unit: mm
„ Features
y Low drain-source ON resistance:RDS(on)typ. = 22 mΩ (VGS = 4.5 V)
y High-speed switching :Qg = 3.8 nC
y Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
„ Marking Symbol:6A
„ Basic Part Number
Dual Nch MOS 33 V (Individual)
„ Packaging
FC8V33030L　Embossed type (Thermo-compression sealing):
3 000 pcs / reel (standard)
„ Absolute Maximum Ratings　Ta = 25 °C
Parameter
Symbol Rating
Drain-source Voltage
VDS
33
Gate-source Voltage
FET1
FET2
Drain Current (Steady State) ^*1
Drain Current (t=10s) ^*1
Drain Current (Pulsed) ^*1,2
Source Current (Pulsed)
(Body Diode) ^*1,2
Power Dissipation (Steady State) ^*1
Overall ^{Power Dissipation (t=10s) *1}
Channel Temperature
VGS
±20
6.5
ID
8
IDp
26
ISp
(BD)
6.5
PD
1
1.5
Tch
150
Storage Temperature Range
Tstg -55 to +150
Note: *1 Device mounted on a glass-epoxy board (See Figure 1)
*2 Pulse test: Ensure that the channel temperature does not exceed 150 °C.
Unit
V
V
A
W
°C
°C
1. Source(FET1)
2. Gate(FET1)
3. Source(FET2)
4. Gate(FET2)
5. Drain(FET2)
6. Drain(FET2)
7. Drain(FET1)
8. Drain(FET1)
Panasonic
JEITA
Code
WMini8-F1
SC-115
―
Internal Connection
FET1
1
8
2
7
FET2
3
6
4
5
Pin name
1. Source(FET1) 5. Drain(FET2)
2. Gate(FET1)
6. Drain(FET2)
3. Source(FET2) 7. Drain(FET1)
4. Gate(FET2)
8. Drain(FET1)
FR-4 (Unit: mm)
25.4 x 25.4 x 0.8
Publication date: October 2012
Ver. BED
(Figure 1) Glass-Epoxy Board
1