DZ3S068D0L Datasheet, PDF (1/4 Pages) Panasonic Semiconductor – Silicon epitaxial planar type For surge absorption circuit

DZ3S068D
Silicon epitaxial planar type
For surge absorption circuit
 Features
 Excellent rising characteristics of zener current I_Z
 Low zener operating resistance R_Z
 Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)
 Marking Symbol: 02
Unit: mm
 Packaging
DZ3S068D0L Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard)
 Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating Unit
Total power dissipation ^*1
P_T
150
mW
Electrostatic discharge ^*2
ESD
±10
kV
Junction temperature
T_j
150
°C
Storage temperature
T_stg –55 to +150 °C
Note) *1: Mounted on glass epoxy print board. (45 mm × 45 mm × 1 mm) (2 Diode total)
Solder in ( 0.6 mm × 0.6 mm)
*2: Test method:IEC61000-4-2 (C = 150 pF, R = 330 Ω, Contact discharge:10 times)
1: Cathode-1
2: Cathode-2
3: Anode-1, 2
Panasonic
JEITA
Code
SSMini3-F3-B
SC-89
SOT-490
3
1
2
 Common Electrical Characteristics T_a = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Forward voltage
Zener voltage ^{*1, 2}
V_F I_F = 10 mA
V_Z I_Z = 5 mA
1.0
V
6.46
7.14
V
Zener operating resistance
R_Z I_Z = 5 mA
30
W
Zener rise operating resistance
R_ZK I_Z = 0.5 mA
60
W
Reverse current
Temparature coefficient of zener voltage ^*3
I_R
V_R = 4 V
S_Z I_Z = 5 mA
0.1
µA
3.1
mV/°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. *1: The temperature must be controlled 25°C for V_Z measurement. V_Z value measured at other temperature must be adjusted to V_Z (25°C)
*2: VZ guaranteed 20 ms after current flow.
*3: Tj = 25°C to 150°C
Publication date: July 2012
Ver. CED
1