DZ2S06800L Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon epitaxial planar type

Doc No. TT4-EA-11782
Revision. 3
DZ2S0680L
Silicon epitaxial planar type
For constant voltage / For surge absorption circuit
DZ2J068 in SSMini2 type package
 Features
 Excellent rising characteristics of zener current Iz
 Low zener operating resistance Rz
 Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
Product Standards
Zener Diode
DZ2S0680L
0.8
2
Unit: mm
0.13
 Marking Symbol: GJ or GU
1
0.3
0.6
 Packaging
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)
1. Cathode
2. Anode
 Absolute Maximum Ratings Ta = 25 C
Parameter
Symbol
Rating
Repetitive peak forward current
Total power dissipation ^*1
Electrostatic discharge ^*2
Junction temperature
IFRM
200
PT
150
ESD
15
Tj
150
Operating ambient temperature
Topr -40 to +85
Storage temperature
Tstg -55 to +150
Note) *1 Mounted on glass epoxy print board ( 45 mm  45 mm  1 mm )
Solder in ( 0.8 mm  0.6 mm )
*2 Test method : IEC61000_4_2
( C = 150 pF, R = 330 , Contact discharge : 10 times )
Unit
mA
mW
kV
C
C
C
Panasonic
JEITA
Code
SSMini2-F5-B
SC-79
SOD-523
Internal Connection
2
1
 Electrical Characteristics Ta = 25 C  3 C
Parameter
Symbol
Conditions
Min Typ Max Unit
Forward voltage
VF IF = 10 mA
1.0
V
Zener voltage ^{*1, *2}
VZ IZ = 5 mA
6.46
7.14
V
Zener operating resistance
RZ IZ = 5 mA
20

Zener rise operating resistance
RZK IZ = 0.5 mA
60

Reverse current
IR VR = 4 V
Temperature coefficient of zener voltage ^*3 SZ IZ = 5 mA
0.1
A
3.2
mV/C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 Measuring methods for Diodes.
2. Absolute frequency of input and output is 5 MHz.
3. *1 The temperature must be controlled 25 C for VZ mesurement.
VZ value measured at other temperature must be adjusted to VZ (25 C).
*2 VZ guaranted 20 ms after current flow
Rank classification
*3 Tj = 25 C to 150 C
Code
M
0
Rank
M
No-rank
VZ
6.64 to 6.98 6.46 to 7.14
Marking symbol
GU
GJ
Page 1 of 4
Established : 2009-11-09
Revised : 2013-07-22