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DZ2J068M0L Datasheet, PDF (1/4 Pages) Panasonic Semiconductor – Silicon epitaxial planar type For constant voltage / waveform clipper and surge absorption circuit Low noise type | |||
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This product complies with the RoHS Directive (EU 2002/95/EC).
DZ2J068
Silicon epitaxial planar type
For constant voltage / waveform clipper and surge absorption circuit
Low noise type
ï¢ Features
ï Excellent rising characteristics of zener current Iz
ï Eco-friendly Halogen-free package
ï¢ Packaging
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
ï¢ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating Unit
Repetitive peak forward current
Total power dissipation *
IFRM
200
mA
PT
200
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg â55 to +150 °C
Note) *: PT = 200 mW achieved with a printed circuit board.
ï¢ Package
ï Code
SMini2-F5-B
ï Pin Name
1. Cathode
2. Anode
ï¢ Marking Symbol: GJ, GU
ï¢ Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Forward voltage
Zener voltage *1, 2, 4
VF IF = 10 mA
VZ IZ = 5 mA
1.0
V
6.46
7.14
V
Zener operating resistance
RZ IZ = 5 mA
20
W
Zener rise operating resistance
RZK IZ = 0.5 mA
60
W
Reverse current
Temperature coefï¬cient of zener voltage *3
IR
VR = 4 V
SZ IZ = 5 mA
0.1
mA
3.2
mV/°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 5 MHz.
3. *1: The temperature must be controlled 25°C for VZ measurement. VZ value measured at other temperature must be adjusted to VZ (25°C)
*2: VZ guaranteed 20 ms after current ï¬ow.
*3: Tj = 25°C to 150°C
*4: Rank classiï¬cation
Code
M
0
Rank
M
No-rank
VZ
Marking Symbol
6.64 to 6.98
GU
6.46 to 7.14
GJ
Publication date: November 2009
ZKE00056BED
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