DZ2J062M0L Datasheet, PDF (1/4 Pages) Panasonic Semiconductor – Silicon epitaxial planar type

This product complies with the RoHS Directive (EU 2002/95/EC).
DZ2J062
Silicon epitaxial planar type
For constant voltage / waveform clipper and surge absorption circuit
Low noise type
 Features
 Excellent rising characteristics of zener current I_z
 Eco-friendly Halogen-free package
 Packaging
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
 Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating Unit
Repetitive peak forward current
Total power dissipation ^*
I_FRM
200
mA
P_T
200
mW
Junction temperature
T_j
150
°C
Storage temperature
T_stg –55 to +150 °C
Note) *: P_T = 200 mW achieved with a printed circuit board.
 Package
 Code
SMini2-F5-B
 Pin Name
1. Cathode
2. Anode
 Marking Symbol: FJ, FU
 Electrical Characteristics T_a = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Forward voltage
Zener voltage ^{*1, 2, 4}
V_F I_F = 10 mA
V_Z I_Z = 5 mA
1.0
V
5.89
6.51
V
Zener operating resistance
R_Z I_Z = 5 mA
30
W
Zener rise operating resistance
R_ZK I_Z = 0.5 mA
100
W
Reverse current
Temperature coefficient of zener voltage ^*3
I_R
V_R = 4.0 V
S_Z I_Z = 5 mA
0.2
mA
2.4
mV/°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 5 MHz.
3. *1: The temperature must be controlled 25°C for V_Z measurement. V_Z value measured at other temperature must be adjusted to V_Z (25°C)
*2: VZ guaranteed 20 ms after current flow.
*3: Tj = 25°C to 150°C
*4: Rank classification
Code
M
0
Rank
M
No-rank
V_Z
Marking Symbol
6.05 to 6.36
FU
5.89 to 6.51
FJ
Publication date: November 2009
ZKE00071BED
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