|
DZ2J056M0L Datasheet, PDF (1/4 Pages) Panasonic Semiconductor – Silicon epitaxial planar type For constant voltage waveform clipper and surge absorption circuit Low noise type | |||
|
This product complies with the RoHS Directive (EU 2002/95/EC).
DZ2J056
Silicon epitaxial planar type
For constant voltage / waveform clipper and surge absorption circuit
Low noise type
ï¢ Features
ï Excellent rising characteristics of zener current Iz
ï Eco-friendly Halogen-free package
ï¢ Packaging
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
ï¢ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating Unit
Repetitive peak forward current
Total power dissipation *
IFRM
200
mA
PT
200
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg â55 to +150 °C
Note) *: PT = 200 mW achieved with a printed circuit board.
ï¢ Package
ï Code
SMini2-F5-B
ï Pin Name
1: Cathode
2: Anode
ï¢ Marking Symbol: DJ, DU
ï¢ Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Forward voltage
Zener voltage *1, 2, 4
VF IF = 10 mA
VZ IZ = 5 mA
1.0
V
5.32
5.88
V
Zener operating resistance
RZ IZ = 5 mA
40
W
Zener rise operating resistance
RZK IZ = 0.5 mA
200
W
Reverse current
Temperature coefï¬cient of zener voltage *3
IR
VR =2.5 V
SZ IZ = 5 mA
0.5
mA
1.6
mV/°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 5 MHz.
3. *1: The temperature must be controlled 25°C for VZ measurement. VZ value measured at other temperature must be adjusted to VZ (25°C)
*2: VZ guaranteed 20 ms after current ï¬ow.
*3: Tj = 25°C to 150°C
*4: Rank classiï¬cation
Code
M
0
Rank
M
No-rank
VZ
Marking Symbol
5.48 to 5.76
DU
5.32 to 5.88
DJ
Publication date: November 2009
ZKE00055BED
1
|
▷ |