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DZ2705600L Datasheet, PDF (1/4 Pages) Panasonic Semiconductor – Silicon epitaxial planar type
DZ27056
Silicon epitaxial planar type
For constant voltage / For surge absorption circuit
DZ2S056 in SSSMini2 type package
 Features
 Excellent rising characteristics of zener current IZ
 Low zener operating resistance RZ
 Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)
Unit: mm
 Marking Symbol: DJ
 Packaging
DZ2705600L Embossed type (Thermo-compression sealing): 10 000 pcs / reel (standard)
 Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating Unit
Repetitive peak forward current
Total power dissipation *1
Electrostatic discharge *2
IFRM
200
mA
PT
120
mW
ESD
±15
kV
Junction temperature
Tj
150
°C
Storage temperature
Tstg –55 to +150 °C
Note) *1: Mounted on glass epoxy print board. (45 mm × 45 mm × 1 mm)
Solder in (0.4 mm × 0.3 mm)
*2: Test method:IEC61000-4-2 (C = 150 pF, R = 330 Ω, Contact discharge:10 times)
1: Cathode
2: Anode
Panasonic
JEITA
Code
SSSMini2-F4-B
SC-104A
SOD-723
 Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Forward voltage
Zener voltage *1, 2
VF IF = 10 mA
VZ IZ = 5 mA
1.0
V
5.32
5.88
V
Zener operating resistance
RZ IZ = 5 mA
40
W
Zener rise operating resistance
RZK IZ = 0.5 mA
200
W
Reverse current
Temperature coefficient of zener voltage *3
IR
VR = 2.5 V
SZ IZ = 5 mA
0.5
mA
1.6
mV/°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 5 MHz.
3. *1: The temperature must be controlled 25°C for VZ measurement. VZ value measured at other temperature must be adjusted to VZ (25°C)
*2: VZ guaranteed 20 ms after current flow.
*3: Tj = 25°C to 150°C
Publication date: January 2013
Ver. DED
1